Si3981DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72502 .
Document Number: 72502
S13-0631-Rev. E, 25-Mar-13
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
SI3983DV-T1-GE3 MOSFET P-CH DUAL 20V 6-TSOP
SI4056DY-T1-GE3 MOSFET N-CH 100V D-S 8SOIC
SI4100DY-T1-E3 MOSFET N-CH D-S 100V 8-SOIC
SI4104DY-T1-E3 MOSFET N-CH D-S 100V 8-SOIC
SI4108DY-T1-GE3 MOSFET N-CH 75V 20.5A 8-SOIC
SI4122DY-T1-GE3 MOSFET N-CH 40V 27.2A 8-SOIC
SI4126DY-T1-GE3 MOSFET N-CH 30V 39A 8-SOIC
SI4134DY-T1-E3 MOSFET N-CH D-S 30V 8-SOIC
相关代理商/技术参数
SI3983DV 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 20-V (D-S) MOSFET
SI3983DV-T1 制造商:Vishay Siliconix 功能描述:TRANS MOSFET P-CH 20V 2.1A 6TSOP - Tape and Reel
SI3983DV-T1-E3 功能描述:MOSFET DUAL P-CH 20V (D-S) SYMETRICAL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3983DV-T1-GE3 功能描述:MOSFET 20V 2.5A 1.15W 110mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3993CDV-T1-GE3 制造商:Vishay Intertechnologies 功能描述: 制造商:Vishay Siliconix 功能描述:MOSFET PP CH 30V 2.9A W/D TSOP6 制造商:Vishay Siliconix 功能描述:MOSFET, PP CH, 30V, 2.9A, W/D, TSOP6 制造商:Vishay Intertechnologies 功能描述:MOSFET, PP CH, 30V, 2.9A, W/D, TSOP6, Transistor Polarity:P Channel, Continuous
SI3993DV-T1-E3 功能描述:MOSFET DUAL P-CH 30V (D-S) RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3993DV-T1-GE3 功能描述:MOSFET 30V 2.2A 1.15W 133mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI40015S99 制造商:ABB Control 功能描述:STARTER STAR DELTA 15W 400V